The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Aug. 07, 2014
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Stmicroelectronics SA, Montrouge, FR;
Perrine Batude, Dijon, FR;
Frederic Mazen, Saint Egreve, FR;
Benoit Sklenard, Grenoble, FR;
Shay Reboh, Guilderland, NY (US);
Commissariat à l'énergie atomique et aux énergies alternatives, Paris, FR;
STMICROELECTRONICS SA, Gentilly, FR;
Abstract
A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.