Finfet semiconductor devices with local isolation features and methods for fabricating the same

Abstract

FinFET semiconductor devices with local isolation features and methods for fabricating such devices are provided. In one embodiment, a method for fabricating a semiconductor device includes providing a semiconductor substrate comprising a plurality of fin structures formed thereon, wherein each of the plurality of fin structures has sidewalls, forming spacers about the sidewalls of the plurality of fin structures, and forming a silicon-containing layer over the semiconductor substrate and in between the plurality of fin structures. The method further includes removing at least a first portion of the silicon-containing layer to form a plurality of void regions while leaving at least a second portion thereof in place and depositing an isolation material in the plurality of void regions.