The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Apr. 29, 2014
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Hyunsoo Chung, Hwaseong-si, KR;

Keum-Hee Ma, Suwon-si, KR;

In-Young Lee, Yongin-si, KR;

Moon Gi Cho, Suwon-si, KR;

Chajea Jo, Bucheon-si, KR;

Taeje Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/03 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/6836 (2013.01); H01L 23/3135 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/03 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/119 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/17051 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/4824 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73257 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81007 (2013.01); H01L 2224/92 (2013.01); H01L 2224/92227 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2924/18161 (2013.01);
Abstract

Semiconductor packages having through electrodes and methods for fabricating the same are provided. The method may comprise providing a first substrate including a first circuit layer, forming a front mold layer on a front surface of the first substrate, grinding a back surface of the first substrate, forming a first through electrode that penetrates the first substrate to be electrically connected to the first circuit layer, providing a second substrate on the back surface of the first substrate, the second substrate including a second circuit layer that is electrically connected to the first through electrode, forming a back mold layer on the back surface of the first substrate, the back mold layer encapsulating the second substrate, and removing the front mold layer.


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