The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Aug. 20, 2014
Lam Research Corporation, Femont, CA (US);
Nicholas Muga Ndiege, San Jose, CA (US);
Krishna Nittala, Sunnyvale, CA (US);
Derek B. Wong, San Jose, CA (US);
George Andrew Antonelli, Portland, OR (US);
Nerissa Sue Draeger, Fremont, CA (US);
Patrick A. Van Cleemput, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. Halogen-free precursors and catalysts include self-catalyzing aminosilane compounds and halogen-free organic acids. Flowable films may be used to fill pores in existing dielectric films on substrates having exposed metallization layers. The methods involve hydrolysis and condensation reactions.