The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9245739 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 26, 2016

Filed:

Aug. 20, 2014
Applicant:

Lam Research Corporation, Femont, CA (US);

Inventors:

Nicholas Muga Ndiege, San Jose, CA (US);

Krishna Nittala, Sunnyvale, CA (US);

Derek B. Wong, San Jose, CA (US);

George Andrew Antonelli, Portland, OR (US);

Nerissa Sue Draeger, Fremont, CA (US);

Patrick A. Van Cleemput, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/0234 (2013.01); H01L 21/02211 (2013.01); H01L 21/02277 (2013.01); H01L 21/02345 (2013.01);
Abstract

Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. Halogen-free precursors and catalysts include self-catalyzing aminosilane compounds and halogen-free organic acids. Flowable films may be used to fill pores in existing dielectric films on substrates having exposed metallization layers. The methods involve hydrolysis and condensation reactions.


Find Patent Forward Citations

Ndiege, Nicholas. (2016). Low-k oxide deposition by hydrolysis and condensation (U.S. Patent No. 9245739). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9245739

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