The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Oct. 15, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Li-Cheng Chu, Taipei, TW;
Hung-Hua Lin, Taipei, TW;
Chih-Jen Chan, Changhua, TW;
Lan-Lin Chao, Sindian, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.