The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Feb. 22, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Kuang-Hung Huang, Tainan, TW;
Jie-Ning Yang, Pingtung County, TW;
Yao-Chang Wang, Tainan, TW;
Chi-Sheng Tseng, Tainan, TW;
Po-Jui Liao, Taichung, TW;
Shih-Chang Chang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/76801 (2013.01); H01L 21/76834 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6653 (2013.01);
Abstract
A semiconductor process includes the following step. A stacked structure is formed on a substrate. A contact etch stop layer is formed to cover the stacked structure and the substrate. A material layer is formed on the substrate and exposes a top part of the contact etch stop layer covering the stacked structure. The top part is redressed.