The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Sep. 17, 2012
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Yaojian Lin, Singapore, SG;

Qing Zhang, Singapore, SG;

Haijing Cao, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11009 (2013.01); H01L 2224/11019 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/16 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/14 (2013.01);
Abstract

A semiconductor device has a first conductive layer formed over a substrate. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. The second insulating layer has a sidewall between a surface of the second insulating material and surface of the second conductive layer. A protective layer is formed over the second insulating layer and surface of the second conductive layer. The protective layer follows a contour of the surface and sidewall of the second insulating layer and second conductive layer. A bump is formed over the surface of the second conductive layer and a portion of the protective layer adjacent to the second insulating layer. The protective layer protects the second insulating layer.


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