The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Dec. 30, 2013
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Wei Shao, Singapore, SG;
Wanbing Yi, Singapore, SG;
Shunqiang Gong, Singapore, SG;
Chao Zhu, Singapore, SG;
Juan Boon Tan, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
Semiconductor device and method for forming a semiconductor device are presented. The method includes providing a substrate prepared with intermediate dielectric layer having interconnect levels. The interconnect levels include Mto Mmetal levels, where 1 is the lowest level and X corresponds to a number of metal level. The metal level Mincludes a metal pad having an oxidized portion. An upper level having an upper dielectric layer is formed over the dielectric layer having M. The upper dielectric layer includes a plurality of via contacts over the metal pad and a metal line over the via contacts. The oxidized portion remains within the metal pad and prevents punch through between Mand its adjacent underlying metal level M.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile