The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Jul. 06, 2010
Charles A. Taylor, Ii, Ann Arbor, MI (US);
Darryl Barlett, Dexter, MI (US);
Douglas Perry, Chelsea, MI (US);
Roy Clarke, Ann Arbor, MI (US);
Jason Williams, Ann Arbor, MI (US);
Charles A. Taylor, II, Ann Arbor, MI (US);
Darryl Barlett, Dexter, MI (US);
Douglas Perry, Chelsea, MI (US);
Roy Clarke, Ann Arbor, MI (US);
Jason Williams, Ann Arbor, MI (US);
k-Space Associates, Inc., Dexter, MI (US);
Abstract
The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.