The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Feb. 19, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Timothy W. Weidman, Sunnyvale, CA (US);

Timothy Michaelson, Milpitas, CA (US);

Paul F. Ma, Santa Clara, CA (US);

Paul Deaton, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); C23C 16/18 (2013.01); C23C 16/45553 (2013.01); H01L 21/28088 (2013.01); H01L 21/28562 (2013.01); H01L 21/76841 (2013.01); H01L 21/76871 (2013.01); H01L 29/4966 (2013.01);
Abstract

Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH)to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.


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