The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Feb. 04, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Judson R. Holt, Wappingers Falls, NY (US);
Jinghong Li, Poughquag, NY (US);
Sanjay Mehta, Niskayuna, NY (US);
Alexander Reznicek, Troy, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/16 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/26506 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/16 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
A composite spacer structure is formed on vertical sidewalls of a gate structure that is formed straddling a semiconductor fin. In one embodiment, the composite spacer structure includes an inner low-k dielectric material portion and an outer nitride material portion.