The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

May. 04, 2015
Applicant:

Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;

Inventors:

Hikaru Ohira, Akishima, JP;

Tamotsu Owada, Yokohama, JP;

Hirosato Ochimizu, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01);
Abstract

A semiconductor device has a semiconductor substrate having a first surface and a second surface, a through electrode penetrating through the semiconductor substrate and having a protrusion protruding from the second surface, and an insulation layer on the second surface, which covers the side surface of the protrusion, has an opening through which to expose the end surface of the protrusion, and has a thickness greater than the length of the protrusion.


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