The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Aug. 12, 2014
United Microelectronics Corporation, Hsinchu, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method include steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited covering the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removing by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate selectively is removed.