The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Sep. 10, 2013
Applicant:
Tokyo Electron Limited, Minato-ku, JP;
Inventor:
Shuji Moriya, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/465 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/465 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01);
Abstract
An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.