The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Nov. 08, 2012
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Tatsushi Ueda, Toyama, JP;
Tadashi Terasaki, Imizu, JP;
Unryu Ogawa, Toyama, JP;
Akito Hirano, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); C23C 16/50 (2006.01); C23F 1/00 (2006.01); C23F 1/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0223 (2013.01); C23C 16/50 (2013.01); C23F 1/00 (2013.01); C23F 1/08 (2013.01); H01L 21/28247 (2013.01); H01L 21/28273 (2013.01);
Abstract
A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.