The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Dec. 14, 2012
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Robert E. Frickey, Sacramento, CA (US);

Yogesh B. Wakchaure, Folsom, CA (US);

Iwen Chao, Sacramento, CA (US);

Xin Guo, San Jose, CA (US);

Kristopher H. Gaewsky, El Dorado Hills, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3418 (2013.01); G11C 11/5628 (2013.01); G11C 16/3404 (2013.01); G06F 12/0246 (2013.01); G06F 2212/1032 (2013.01); G11C 2211/5641 (2013.01); G11C 2211/5646 (2013.01);
Abstract

An electronic memory or controller may use a first type of read command, addressed to a first page of memory of an electronic memory that includes information to indicate that a second page of memory of the electronic memory has not been programmed and a second type of read command, addressed to the first page of memory, that includes information to indicate that the second page of memory has been programmed. The first page of memory may include a lower page of a multi-level cell (MLC), and the second page of memory may include an upper page of the same MLC. The second page of memory is enabled during a period of time that the first type of read command is used.


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