The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Aug. 16, 2010
Yuan He, Boise, ID (US);
Kaveri Jain, Boise, ID (US);
Lijing Gou, Boise, ID (US);
Zishu Zhang, Boise, ID (US);
Anton Devilliers, Boise, ID (US);
Michael Hyatt, Boise, ID (US);
Jianming Zhou, Boise, ID (US);
Scott Light, Boise, ID (US);
Dan Millward, Boise, ID (US);
Yuan He, Boise, ID (US);
Kaveri Jain, Boise, ID (US);
Lijing Gou, Boise, ID (US);
Zishu Zhang, Boise, ID (US);
Anton deVilliers, Boise, ID (US);
Michael Hyatt, Boise, ID (US);
Jianming Zhou, Boise, ID (US);
Scott Light, Boise, ID (US);
Dan Millward, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.