The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Jul. 27, 2011
Applicants:

Fumimasa Horikiri, Nagareyama, JP;

Kenji Shibata, Tsukuba, JP;

Kazufumi Suenaga, Tsuchiura, JP;

Kazutoshi Watanabe, Tsuchiura, JP;

Akira Nomoto, Kasumigaura, JP;

Inventors:

Fumimasa Horikiri, Nagareyama, JP;

Kenji Shibata, Tsukuba, JP;

Kazufumi Suenaga, Tsuchiura, JP;

Kazutoshi Watanabe, Tsuchiura, JP;

Akira Nomoto, Kasumigaura, JP;

Assignee:

SCIOCS COMPANY LIMITED, Hitachi-shi, Ibaraki-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01); H01L 41/08 (2006.01); H05K 3/10 (2006.01); H01L 21/67 (2006.01); H01L 41/187 (2006.01); H01L 41/332 (2013.01); H01L 41/314 (2013.01); H01L 41/316 (2013.01); H01L 41/318 (2013.01);
U.S. Cl.
CPC ...
H01L 41/0805 (2013.01); H01L 21/67069 (2013.01); H01L 41/1873 (2013.01); H01L 41/332 (2013.01); H05K 3/108 (2013.01); H01L 41/314 (2013.01); H01L 41/316 (2013.01); H01L 41/318 (2013.01); Y10T 428/24479 (2015.01);
Abstract

A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.


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