The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Feb. 05, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of forming a semiconductor device comprises forming a gate over a substrate. The method also comprises forming a source and a drain on opposite sides of the gate. The source and the drain are formed such that the source and the drain are separated by a channel region beneath the gate. The source and the drain are positioned such that the channel region has a channel width with respect to a surface of the substrate greater than a width of the gate with respect to the surface of the substrate. The method further comprises forming a first silicide over a portion of the source. The method additionally comprises forming a second silicide over a portion of the drain such that the drain has an unsilicided region adjacent to the gate configured to provide a resistive region configured to sustain a voltage load in a high voltage laterally diffused metal oxide semiconductor (LDMOS) application.