The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jan. 30, 2015
Micron Technology, Inc., Boise, ID (US);
John Hopkins, Meridian, ID (US);
Darwin Franseda Fan, Boise, ID (US);
Fatma Arzum Simsek-Ege, Boise, ID (US);
James Brighten, Boise, ID (US);
Aurelio Giancarlo Mauri, Meda, IT;
Srikant Jayanti, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension.