The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

May. 23, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Dong-Hsu Cheng, Tainan, TW;

Ming-Ho Tsai, Hsinchu, TW;

Chih-Chung Huang, Hsinchu, TW;

Yung-Hsiang Chen, New Taipei, TW;

Jyun-Hong Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G03F 7/70633 (2013.01);
Abstract

The present disclosure provides an integrated circuit structure that includes a semiconductor substrate having a first region and a second region having an area less than about 10 micron×10 micron; a first material layer over the semiconductor substrate and patterned to have a first circuit feature in the first region and a first mark in the second region; and a second material layer over the first material layer and patterned to have a second circuit feature in the first region and a second mark in the second region. The first mark includes first mark features oriented in a first direction, and second mark features oriented in a second direction perpendicular to the first direction. The second mark includes third mark features oriented in the first direction, and fourth mark features oriented in the second direction.


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