The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Oct. 01, 2013
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Joseph G. Coones, Boise, ID (US);

Jeremy S. Frei, Boise, ID (US);

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/6835 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01);
Abstract

Engineered substrates having thermally opaque materials for preventing transmission of radiative energy during epitaxial growth processes and for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a thermally opaque material at an upper surface of a handle substrate and bonding an epitaxial formation structure on the handle substrate such that the thermally opaque material is between the epitaxial formation structure and the handle substrate. In various embodiments, the thermally opaque material at least partially blocks radiative heat transmission between the handle substrate and the epitaxial formation structure, for example, to provide increased accuracy of epitaxy process temperature measurements and/or increased uniformity of epitaxy growth characteristics across the engineered substrate.


Find Patent Forward Citations

Loading…