The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jul. 21, 2014
Intermolecular Inc., San Jose, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Sandisk 3d Llc, Milpitas, CA (US);
Yun Wang, San Jose, CA (US);
Federico Nardi, Palo Alto, CA (US);
Milind Weling, Pleasanton, CA (US);
Intermolecular, Inc., San Jose, unknown;
Kabushiki Kaisha Toshiba, Tokyo, JP;
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A resistive-switching memory (ReRAM cell) has a current-limiting electrode layer that combines the functions of an embedded resistor, an outer electrode, and an intermediate electrode, reducing the thickness of the ReRAM stack and simplifying the fabrication process. The materials include compound nitrides of a transition metal and one of aluminum, boron, or silicon. In experiments with tantalum silicon nitride, peak yield in the desired resistivity range corresponded to24 at % silicon and32 at % nitrogen, believed to optimize the trade-off between inhibiting TaSiformation and minimizing nitrogen diffusion. A binary metal nitride may be formed at one or more of the interfaces between the current-limiting electrode and neighboring layers such as metal-oxide switching layers.