The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Aug. 10, 2012
Applicants:
Anton Mauder, Kolbermoor, DE;
Reinhard Ploss, Unterhaching, DE;
Hans-joachim Schulze, Taufkirchen, DE;
Inventors:
Anton Mauder, Kolbermoor, DE;
Reinhard Ploss, Unterhaching, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 23/36 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 23/00 (2006.01); H01L 21/74 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/45 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 23/36 (2013.01); H01L 29/0657 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7802 (2013.01); H01L 21/2255 (2013.01); H01L 21/2257 (2013.01); H01L 21/3247 (2013.01); H01L 21/743 (2013.01); H01L 24/05 (2013.01); H01L 29/0653 (2013.01); H01L 29/0878 (2013.01); H01L 29/456 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05078 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor layer adjoins the semiconductor substrate at the first side. The semiconductor layer caps the first trench at the first side. The semiconductor device further includes a contact at a second side of the semiconductor substrate opposite to the first side.