The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Jun. 21, 2012
Dorothea Werber, Munich, DE;
Frank Pfirsch, Munich, DE;
Hans-joachim Schulze, Taufkirchen, DE;
Carsten Schaeffer, Annenheim, AT;
Volodymyr Komarnitskyy, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Dorothea Werber, Munich, DE;
Frank Pfirsch, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Carsten Schaeffer, Annenheim, AT;
Volodymyr Komarnitskyy, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.