The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Apr. 10, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG).