The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Feb. 13, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ru-Shang Hsiao, Jhubei, TW;
Hung Pin Chen, Kaohsiung, TW;
Wei-Barn Chen, Tainan, TW;
Chih-Fu Chang, Neipu Township, TW;
Chih-Kang Chao, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
As will be appreciated in more detail herein, the present disclosure provides for FinFET techniques whereby a FinFET channel region has a particular orientation with respect to the crystalline lattice of the semiconductor device to provide enhanced mobility, compared to conventional FinFETs. In particular, the present disclosure provides FinFETs with a channel region whose lattice includes silicon atoms arranged on (551) lattice plane. In this configuration, the sidewalls of the channel region are particularly smooth at the atomic level, which tends to promote higher carrier mobility and higher device performance than previously achievable.