The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Nov. 15, 2013
Infineon Technologies Austria Ag, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Anton Mauder, Kolbermoor, DE;
Joachim Weyers, Hoehenkirchen, DE;
Franz Hirler, Isen, DE;
Markus Schmitt, Neubiberg, DE;
Armin Willmeroth, Ausburg, DE;
Björn Fischer, Munich, DE;
Stefan Gamerith, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate with second conductivity type compensation regions. The drift portions contact the drain metallization and have a first maximum doping concentration. The compensation regions are in Ohmic contact with the source metallization. The peripheral area includes a first edge termination region and a second semiconductor region in Ohmic contact with the drift portions having a second maximum doping of the first conductivity type which lower than the first maximum doping concentration by a factor of ten. The first edge termination region of the second conductivity type adjoins the second semiconductor region and is in Ohmic contact with the source metallization.