The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Mar. 23, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

David S. Pratt, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/48 (2006.01); H01L 21/304 (2006.01); H01L 21/78 (2006.01); H01L 21/66 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/304 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 23/48 (2013.01); H01L 24/11 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 21/565 (2013.01); H01L 21/6836 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/812 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/0001 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/14 (2013.01);
Abstract

Stacked semiconductor devices, semiconductor assemblies, methods of manufacturing stacked semiconductor devices, and methods of manufacturing semiconductor assemblies. One embodiment of a semiconductor assembly comprises a thinned semiconductor wafer having an active side releasably attached to a temporary carrier, a back side, and a plurality of first dies at the active side. The individual first dies have an integrated circuit, first through die interconnects electrically connected to the integrated circuit, and interconnect contacts exposed at the back side of the wafer. The assembly further includes a plurality of separate second dies attached to corresponding first dies on a front side, wherein the individual second dies have integrated circuits, through die interconnects electrically connected to the integrated circuits and contact points at a back side, and wherein the individual second dies have a thickness of approximately less than 100 microns.


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