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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9209042 B1

PDFFull Text
Date of Patent:
Dec. 08, 2015

Filed:

Jun. 11, 2014

Compound semiconductor device and manufacturing method therefor

Applicants:

Naoya Okamoto, Isehara, JP;

Kozo Makiyama, Kawasaki, JP;

Toshihiro Ohki, Hadano, JP;

Yuichi Minoura, Zama, JP;

Shirou Ozaki, Yamato, JP;

Toyoo Miyajima, Isehara, JP;

Inventors:

Naoya Okamoto, Isehara, JP;

Kozo Makiyama, Kawasaki, JP;

Toshihiro Ohki, Hadano, JP;

Yuichi Minoura, Zama, JP;

Shirou Ozaki, Yamato, JP;

Toyoo Miyajima, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 29/423 (2006.01); H01L 29/47 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01); H01L 21/28 (2006.01); H01L 29/205 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/43 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/28 (2013.01); H01L 21/28581 (2013.01); H01L 29/205 (2013.01); H01L 29/42316 (2013.01); H01L 29/475 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/872 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/432 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.

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