The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Jul. 31, 2009
Applicants:
Robert K. Barr, Shrewsbury, MA (US);
Hua Dong, Shrewsbury, MA (US);
Thomas C. Sutter, Holden, MA (US);
Inventors:
Robert K. Barr, Shrewsbury, MA (US);
Hua Dong, Shrewsbury, MA (US);
Thomas C. Sutter, Holden, MA (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); C25D 5/02 (2006.01); C25D 5/34 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); C23C 28/00 (2006.01);
U.S. Cl.
CPC ...
C25D 5/022 (2013.01); C23C 28/322 (2013.01); C23C 28/34 (2013.01); C23C 28/345 (2013.01); C25D 5/024 (2013.01); C25D 5/028 (2013.01); C25D 5/34 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); Y02E 10/50 (2013.01);
Abstract
Methods include selectively depositing a phase change resist having high light transmittance onto a dielectric to form a pattern, etching away portions of the dielectric not covered by the resist and depositing a metal seed layer on the etched portions of the dielectric. A metal layer is then deposited on the metal seed layer by light induced plating.