The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Mar. 14, 2014
Macronix International Co., Ltd., Hsinchu, TW;
Ming-Tung Lee, Taoyuan County, TW;
Cheng-Chi Lin, Yilan County, TW;
Chih-Chia Hsu, Zhongli, TW;
Chien-Chung Chen, Pingtung County, TW;
Shih-Chin Lien, New Taipei, TW;
Shyi-Yuan Wu, Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a first well, a first heavily doping region, a field oxide, a first dielectric layer, and a conductive layer. The first well is disposed on the substrate, and the first heavily doping region is disposed in the first well. The field oxide is disposed on the first well and adjacent to the first heavily doping region. The first dielectric layer is disposed on the field oxide and covering the field oxide. The conductive layer is disposed on the first dielectric layer. The first well and the first heavily doping region have a first type doping.