The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Sep. 30, 2010
Applicants:

Keiichiro Hitomi, Delmar, NY (US);

Yoshinori Nakayama, Sayama, JP;

Junichi Tanaka, Hachioji, JP;

Inventors:

Keiichiro Hitomi, Delmar, NY (US);

Yoshinori Nakayama, Sayama, JP;

Junichi Tanaka, Hachioji, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 9/47 (2006.01); H04N 7/18 (2006.01); G01B 15/00 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
G01B 15/00 (2013.01); H01J 37/28 (2013.01); H01J 2237/2814 (2013.01); H01J 2237/2817 (2013.01);
Abstract

In order to provide a pattern dimension measurement method with a small measured error and excellent reproducibility even though defocus occurs and a charged particle beam microscope used in the same, in a method for applying a charged particle beam to a specimen formed with a pattern to measure a pattern dimension from a signal intensity distribution of signal charged particles from the specimen, edge index positions (X) and (X) on the right and left of the maximum point of signal intensity corresponding to a pattern edge are calculated by a threshold method, and a pattern edge position (Xe) is found from a mean value between the positions. Thus, it is possible to reduce the influence of defocus on the pattern edge position (Xe).


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