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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9196730 B1

PDFFull Text
Date of Patent:
Nov. 24, 2015

Filed:

Jun. 20, 2014

Variable channel strain of nanowire transistors to improve drive current

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Tsung-Hsing Yu, Taipei, TW;

Yeh Hsu, Taoyuan County, TW;

Chia-Wen Liu, Taipei, TW;

Jean-Pierre Colinge, Hsinchu, TW;

Assignee:

Taiwan Seminconductor Manufacturing Company Limited, Hsinchu, TW;

Attorney:

Jones Day

Primary Examiner:

Allan R Wilson

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7845 (2013.01); H01L 21/28017 (2013.01); H01L 29/0676 (2013.01); H01L 29/4238 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device with variable channel strain is provided. The semiconductor device comprises a nanowire structure formed as a channel between a source region and a drain region. The nanowire structure has a first channel section subjected to a first strain level and joined with a second channel section subjected to a second strain level different from the first strain level. The first channel section is coupled adjacent to the drain region and the second channel section is coupled adjacent to the source region. The semiconductor device further comprises a gate region that has a first strain section and a second strain section. The first strain section is configured to cause the first channel section to be subjected to the first strain level and the second strain section is configured to cause the second channel section to be subjected to the second strain level.

Find Patent Forward Citations

Yu, Tsung-Hsing. (2015). Variable channel strain of nanowire transistors to improve drive current (U.S. Patent No. 9196730). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9196730

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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