The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Feb. 20, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Liang-Chen Chi, Hsinchu, TW;
Chia-Ming Tsai, Zhubei, TW;
Yu-Min Chang, Hsinchu, TW;
Chin-Kun Wang, Hsinchu, TW;
Miin-Jang Chen, Taipei, TW;
Li-Tien Huang, New Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02181 (2013.01); H01L 21/02274 (2013.01); H01L 21/02332 (2013.01); H01L 21/28202 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.