The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Sep. 13, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Fang Tzou, Tainan, TW;
Chien-Ming Lai, Tainan, TW;
Yi-Wen Chen, Tainan, TW;
Hung-Yi Wu, Keelung, TW;
Tong-Jyun Huang, Tainan, TW;
Chien-Ting Lin, Hsinchu, TW;
Chun-Hsien Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A metal gate transistor is disclosed. The metal gate transistor includes a substrate, a metal gate on the substrate, and a source/drain region in the substrate. The metal gate further includes a high-k dielectric layer, a bottom barrier metal (BBM) layer on the high-k dielectric layer, a first work function layer on the BBM layer, a second work function layer between the BBM layer and the first work function layer, and a low resistance metal layer on the first work function layer. Preferably, the first work function layer includes a p-type work function layer and the second work function layer includes a n-type work function layer.