The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Oct. 22, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Li-Te S. Lin, Hsinchu, TW;

Meng Jun Wang, Qingshui Township, TW;

Ya Hui Chang, Hsinchu, TW;

Hui Ouyang, Chubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/3205 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28026 (2013.01); H01L 21/28008 (2013.01); H01L 21/28123 (2013.01); H01L 21/32139 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for fabricating a semiconductor device is disclosed. The method includes forming at least one material layer over a substrate; performing an end-cut patterning process to form an end-cut pattern overlying the at least one material layer; transferring the end-cut pattern to the at least one material layer; performing a line-cut patterning process after the end-cut patterning process to form a line-cut pattern overlying the at least one material layer; and transferring the line-cut pattern to the at least one material layer.


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