The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Sep. 11, 2014
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Ming-Chang Lee, Hsinchu, TW;
Chih-Kuo Tseng, Taichung, TW;
Assignee:
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 29/36 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02667 (2013.01); H01L 21/02381 (2013.01); H01L 21/02642 (2013.01); H01L 29/1029 (2013.01); H01L 29/36 (2013.01);
Abstract
The present disclosure provides a carrier channel with an element concentration gradient distribution. The carrier channel includes a substrate and a carrier channel structure. The carrier channel structure is stacked on the substrate, wherein a ratio of a height and a width of the carrier channel is greater than 1, and the carrier channel is crystallized from the contact surface by a rapid melting growth process, thus the carrier channel structure has the element concentration gradient distribution.
Published as: