The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Nov. 19, 2012
Applicants:

Teng-hao Yeh, Hsinchu, TW;

Yen-hao Shih, New Taipei, TW;

Yan-ru Chen, Hsinchu, TW;

Inventors:

Teng-Hao Yeh, Hsinchu, TW;

Yen-Hao Shih, New Taipei, TW;

Yan-Ru Chen, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 5/06 (2006.01); H01L 21/28 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 5/063 (2013.01); G11C 16/0483 (2013.01); H01L 21/28282 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01); G11C 2213/71 (2013.01);
Abstract

A device on an integrated circuit includes a stack of alternating semiconductor lines and insulating lines, and a gate structure over the stack of semiconductor lines. The gate structure includes a vertical portion adjacent the stack on the at least one side, and horizontal extension portions between the semiconductor lines. Sides of the insulating lines can be recessed relative to sides of the semiconductor lines, so at least one side of the stack includes recesses between semiconductor lines. The horizontal extension portions can be in the recesses. The horizontal extension portions have inside surfaces adjacent the sides of the insulating lines, and outside surfaces that can be flush with the sides of the semiconductor lines. The device may include a second gate structure spaced away from the first mentioned gate structure, and an insulating element between horizontal extension portions of the second gate structure and the first mentioned gate structure.


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