The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Apr. 13, 2012
Thomas N. Adam, Slingerlands, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Jinghong LI, Poughquag, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
Thomas N. Adam, Slingerlands, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Jinghong Li, Poughquag, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
GLOBALFOUNDRIES U.S.2 LLC, Hopewell Junction, NY (US);
Abstract
A semiconductor structure including a semiconductor wafer. The semiconductor wafer includes a gate structure, a first trench in the semiconductor wafer adjacent to a first side of the gate structure and a second trench adjacent to a second side of the gate structure, the first and second trenches filled with a doped epitaxial silicon to form a source in the filled first trench and a drain in the filled second trench such that each of the source and drain are recessed and have an inverted facet. In a preferred exemplary embodiment, the epitaxial silicon is doped with boron.