The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Oct. 07, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chih-Yu Lai, Tainan, TW;

Yeur-Luen Tu, Taichung, TW;

Chih-Hui Huang, Tainan County, TW;

Cheng-Ta Wu, Chiayi County, TW;

Chia-Shiung Tsai, Hsinchu, TW;

Luan C. Tran, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/223 (2006.01); H01L 21/225 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 31/09 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/02129 (2013.01); H01L 21/223 (2013.01); H01L 21/2255 (2013.01); H01L 21/76224 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 31/09 (2013.01);
Abstract

Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.


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