The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Oct. 17, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Szu-Ying Chen, Toufen Township, TW;

Tzu-Hsuan Hsu, Kaohsiung, TW;

Chao-Yang Yeh, Luzhou, TW;

Dun-Nian Yaung, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/48 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/48 (2013.01); H01L 22/32 (2013.01);
Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first hybrid bonded device including a first device and a second device hybrid bonded face-to-face to the first device. The first device includes a first substrate having first bonding connectors and a first bonding layer disposed on a surface thereof. A second hybrid bonded device is bonded back-to-back to the first hybrid bonded device. The second hybrid bonded device includes a third device and a fourth device hybrid bonded face-to-face to the third device. The third device includes a second substrate having second bonding connectors and a second bonding layer disposed on a surface. The second bonding connectors of the third device are coupled to the first bonding connectors of the first device, and the second bonding layer of the third device is coupled to the first bonding layer of the first device.


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