The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jun. 17, 2011
Yongtaek Lee, Seoul, KR;
Hyuntai Kim, Kyungki Do, KR;
Gwang Kim, Kyungki Do, KR;
Byunghoon Ahn, Kyungki-Do, KR;
Kai Liu, Phoenix, AZ (US);
YongTaek Lee, Seoul, KR;
HyunTai Kim, Kyungki Do, KR;
Gwang Kim, Kyungki Do, KR;
ByungHoon Ahn, Kyungki-Do, KR;
Kai Liu, Phoenix, AZ (US);
STATS ChipPAC, Ltd., Singapore, SG;
Abstract
A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.