The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

May. 13, 2013
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Souichi Fukaya, Niigata, JP;

Hideo Nakagawa, Niigata, JP;

Kouhei Sasamoto, Niigata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/30 (2012.01); G03F 1/54 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01); G03F 1/30 (2013.01); G03F 1/54 (2013.01); G03F 1/80 (2013.01);
Abstract

A light-shielding filmformed on a transparent substratehas a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The light-shielding filmhas an optical density of 2 or higher and 4 or lower and has a reflection-preventing function. The layer made of a chromium-containing material including tin, which constitutes the light-shielding film, can cause a significant increase in the etching rate at the time of chlorine-containing dry etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision.


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