The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jan. 16, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd.;
Inventors:
Wen-Chao Chen, Tainan, TW;
Ming-Ray Mao, Tainan, TW;
Shih-Hsien Yang, Zhubei, TW;
Kuan-Chi Tsai, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 23/00 (2006.01); H01G 4/30 (2006.01); H01G 4/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/97 (2013.01); H01G 4/30 (2013.01); H01G 4/306 (2013.01); H01G 4/40 (2013.01); H01L 24/11 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/16268 (2013.01); H01L 2924/15788 (2013.01);
Abstract
A method includes forming a plurality of dielectric layers over a semiconductor substrate; and forming integrated passive devices in the plurality of dielectric layers. The semiconductor substrate is then removed from the plurality of dielectric layers. A dielectric substrate is bonded onto the plurality of dielectric layers.