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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9184101 B1

PDFFull Text
Date of Patent:
Nov. 10, 2015

Filed:

Mar. 11, 2013

Method for removing semiconductor fins using alternating masks

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tzu-Chun Lo, New Taipei, TW;

Min-Hung Cheng, Taipei, TW;

Hsiao-Wei Su, Tainan, TW;

Jeng-Shiun Ho, Hsin-Chu, TW;

Ching-Che Tsai, Zhubei, TW;

Cheng-Cheng Kuo, Hsinchu, TW;

Hua-Tai Lin, Hsinchu, TW;

Chia-Chu Liu, Shin-Chu, TW;

Kuei-Shun Chen, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Duane Morris LLP

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Regan J Rundio

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 21/84 (2006.01); H01L 21/308 (2006.01); H01L 51/00 (2006.01); H01L 27/092 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/845 (2013.01); H01L 21/0337 (2013.01); H01L 21/3083 (2013.01); H01L 21/32139 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 27/1288 (2013.01); H01L 51/0018 (2013.01);
Abstract

A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

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