The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 23, 2013
Micron Technology, Inc., Boise, ID (US);
Dow Global Technologies Llc, Midland, MI (US);
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
William R. Brown, Boise, ID (US);
Adam Olson, Boise, ID (US);
Kaveri Jain, Boise, ID (US);
Ho Seop Eom, Boise, ID (US);
Xue Gloria Chen, Boise, ID (US);
Nik Mirin, Boise, ID (US);
Dan Millward, Boise, ID (US);
Peter Trefonas, III, Medway, MA (US);
Phillip Dene Hustad, Natick, MA (US);
Jong Keun Park, Westborough, MA (US);
Christopher Nam Lee, Austin, TX (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.