The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Aug. 10, 2012
Kuo-ji Chen, Wu-Ku, TW;
Wen-chuan Chiang, Hsin-Chu, TW;
Huey-chi Chu, Hsin-Chu, TW;
Ming-hsiang Song, Shin-Chu, TW;
Chen-jong Wang, Hsin-Chu, TW;
Kuo-Ji Chen, Wu-Ku, TW;
Wen-Chuan Chiang, Hsin-Chu, TW;
Huey-Chi Chu, Hsin-Chu, TW;
Ming-Hsiang Song, Shin-Chu, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods and apparatus are disclosed for manufacturing metal-insulator-metal (MIM) capacitors. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, in contact with a sidewall of a via. The sidewall contact or the bottle neck of the electrode may burn out to form a high impedance path when the leakage current exceeds a specification, while the sidewall contact or the bottle neck of the electrode has no impact for normal MIM operations. The MIM capacitors may be used as decoupling capacitors.