The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Mar. 28, 2014
International Business Machines Corporation, Armonk, NY (US);
Unoh Kwon, Fishkill, NY (US);
Wing L. Lai, Hopewell Junction, NY (US);
Vijay Narayanan, New York, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Shahab Siddiqui, Somers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a semiconductor structure by forming an oxide layer above a substrate; optionally annealing the oxide layer to densify the oxide layer; forming a first sacrificial gate above the substrate; removing the first dummy gate; optionally annealing the first gate oxide layer; and forming a first replacement metal gate above the gate oxide layer. In some embodiments selective nitridation may be performed during the annealing step.