The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Sep. 10, 2014
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Wen-Wei Yeh, Bade, TW;

Chih-Shen Chang, New Taipei, TW;

Kuo-Pin Chang, Miaoli County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01);
Abstract

A pre-reading method and a programming method for a 3D NAND flash memory are provided. The pre-reading method comprises the following steps. A selected string includes a first memory cell, two second memory cells and a plurality of third memory cells. The two second memory cells are adjacent to the first memory cell. The third memory cells are not adjacent to the first memory cell. A first pass voltage is applied on the second memory cells, a second pass voltage is applied on the third memory cells, and a read voltage is applied on the first memory cell via a plurality of word lines for reading a data of the first memory cell. The first pass voltage is larger than the second pass voltage.


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